FDG315N absolute maximum ratings t a = 25c unless otherwise noted symbol parameter ratings units v dss drain-source voltage 30 v v gss gate-source voltage 20 v i d drain current - continuous (note 1a) 2a - pulsed 6 power dissipation for single operation (note 1a) 0.75 w p d (note 1b) 0.48 t j , t stg operating and storage junction temperature range -55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1b) 260 c/w package marking and ordering information device marking device reel size tape width quantity . 15 FDG315N 7?? 8mm 3000 units applications ? dc/dc converter ? load switch ? power management features ? 2 a, 30 v. r ds(on) = 0.12 ? @ v gs = 10 v r ds(on) = 0.16 ? @ v gs = 4.5 v. ? low gate charge (2.1nc typical). ? high performance trench technology for extremely low r ds(on) . ? compact industry standard sc70-6 surface mount package. sc70-6 d s d g d d 3 5 6 4 1 2 3 product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 30 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 26 mv/ c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 1 a i gss gate-body leakage forward v gs = 16 v, v ds = 0 v 100 na i gss gate-body leakage reverse v gs = -16 v, v ds = 0 v -100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 11.83 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -4 mv/ c r ds(on) static drain-source on-resistance v gs = 10 v, i d = 2 a v gs = 10 v, i d = 2 a, t j = 125 c v gs = 4.5 v, i d = 1.7 a 0.100 0.140 0.130 0.12 0.20 0.16 ? i d(on) on-state drain current v gs = 4.5 v, v ds = 5 v 3 a g fs forward transconductance v ds = 5 v, i d = 2 a 5 s dynamic characteristics c iss input capacitance 220 pf c oss output capacitance 50 pf c rss reverse transfer capacitance v ds = 15 v, v gs = 0 v, f = 1.0 mhz 20 pf switching characteristics (note 2) i d(on) turn-on delay time 3 6 ns t r turn-on rise time 11 22 ns t d(off) turn-off delay time 7 14 ns t f turn-off fall time v dd = 15 v, i d = 1 a, v gs = 10 v, r gen = 6 ? 36ns q g total gate charge 2.1 4 nc q gs gate-source charge 0.8 nc q gd gate-drain charge v ds = 15 v, i d = 2 a, v gs = 5 v 0.7 nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current 0.42 a v sd drain-source diode forward voltage v gs = 0 v, i s = 0.42 a (note 2) 0.7 1.2 v notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the s older mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width 300 s, duty cycle 2.0% a) 170 c/w when mounted on a 1 in 2 pad of 2oz copper. b) 260 c/w when mounted on a minimum pad. FDG315N product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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